1. Corrigendum to "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications" [Solid State Electron. 105 (2015) 6–11]. (May 2016) Authors: Golshani, Negin; Derakhshandeh, Jaber; Beenakker, C.I.M.; Ishihara, R. Journal: Solid-state electronics Issue: Volume 119(2016) Page Start: 50 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Corrigendum to "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications" [Solid State Electron. 105 (2015) 6–11]. (May 2016) Authors: Golshani, Negin; Derakhshandeh, Jaber; Beenakker, C.I.M.; Ishihara, R. Journal: Solid-state electronics Issue: Volume 119(2016) Page Start: 50 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications. (March 2015) Authors: Golshani, Negin; Derakhshandeh, Jaber; Beenakker, C.I.M.; Ishihara, R. Journal: Solid-state electronics Issue: Volume 105(2015) Page Start: 6 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗