High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications. (March 2015)

• Record Type: Journal Article
• Authors: Golshani, Negin; Derakhshandeh, Jaber; Beenakker, C.I.M.; Ishihara, R.
• Is Part Of: Solid-state electronics. Volume 105(2015)
• Page Start: 6
• Page End: 11
• Publication Date: 2015-03
• Subjects: PureB -- CVD -- Silicon drift detectors -- High-ohmic resistors -- TCR; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2014.11.022
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Fabrication of high-ohmic resistors using pure boron layer deposition. Fabrication process is reproducible and IC compatible. Resistors are reproducible, linear, bias-independent. Resistors have low temperature coefficients low tolerances. Resistors are integrated in the silicon drift detectors fabrication flow. Abstract: In this paper we report a novel process to fabricate high-ohmic resistors using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon substrate. Sheet resistance values in the 100 kΩ/□ range are achieved using a reproducible and IC compatible process. The resistors made in this material are linear, bias-independent for the voltage ranges as high as 100 V, low temperature coefficients of a few hundred ppm/°C and less than 1% tolerances. As an application, these resistors are integrated in the silicon drift detectors fabrication flow as voltage divider for the drift of electrons, successfully.