Corrigendum to "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications" [Solid State Electron. 105 (2015) 6–11]. (May 2016)

Record Type:
Journal Article
Title:
Corrigendum to "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications" [Solid State Electron. 105 (2015) 6–11]. (May 2016)
Main Title:
Corrigendum to "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications" [Solid State Electron. 105 (2015) 6–11]
Authors:
Golshani, Negin
Derakhshandeh, Jaber
Beenakker, C.I.M.
Ishihara, R.
Abstract:
Is Part Of:
Solid-state electronics. Volume 119(2016)
Journal:
Solid-state electronics
Issue:
Volume 119(2016)
Issue Display:
Volume 119, Issue 2016 (2016)
Year:
2016
Volume:
119
Issue:
2016
Issue Sort Value:
2016-0119-2016-0000
Page Start:
50
Page End:
Publication Date:
2016-05
Subjects:
Semiconductors -- Periodicals
Semiconducteurs -- Périodiques
621.38152
Journal URLs:
http://www.sciencedirect.com/science/journal/00381101 ↗
http://www.elsevier.com/journals ↗
DOI:
10.1016/j.sse.2016.01.011 ↗
Languages:
English
ISSNs:
0038-1101
Deposit Type:
Legaldeposit
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:
British Library DSC - 8327.385000
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Ingest File:
1470.xml