Search

Author/Creator Gamarra, P.

1. Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films. (15th February 2017)

Authors:
Vilalta-Clemente, A.; Naresh-Kumar, G.; Nouf-Allehiani, M.; Gamarra, P.; di Forte-Poisson, M.A.; Trager-Cowan, C.; Wilkinson, A.J.
Journal:
Acta materialia
Issue:
Volume 125(2017)
Page Start:
125
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Issue 9 (August 2015)

Authors:
Bisi, D.; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, F.; Chini, A.; Soci, F.; Pantellini, A.; Lanzieri, C.; Gamarra, P.; Lacam, C.; Tordjman, M.; di Forte-Poisson, M.-A.; De Salvador, D.; Bazzan, M.; Meneghesso, G.; Zanoni, E.
Journal:
Microelectronics and reliability
Issue:
Volume 55:Issue 9/10(2015)
Page Start:
1662
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. (September 2018)

Authors:
Oualli, M.; Dua, C.; Patard, O.; Altuntas, P.; Piotrowicz, S.; Gamarra, P.; Lacam, C.; Jacquet, J.-C.; Teisseire, L.; Lancereau, D.; Chartier, E.; Potier, C.; Delage, S.L.
Journal:
Microelectronics and reliability
Issue:
Volume 88/90(2018)
Page Start:
418
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗