1. Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol.35 065009). (20th May 2021) Authors: Dhingra, Archit; Galiy, Pavlo V; Wang, Lu; Vorobeva, Nataliia S; Lipatov, Alexey; Torres, Angel; Nenchuk, Taras M; Gilbert, Simeon J; Sinitskii, Alexander; Yost, Andrew J; Mei, Wai-Ning; Fukutani, Keisuke; Chen, Jia-Shiang; Dowben, Peter A Journal: Semiconductor science and technology Issue: Volume 36:Number 6(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Surface termination and Schottky-barrier formation of In4Se3(001). (6th May 2020) Authors: Dhingra, Archit; Galiy, Pavlo V; Wang, Lu; Vorobeva, Nataliia S; Lipatov, Alexey; Torres, Angel; Nenchuk, Taras M; Gilbert, Simeon J; Sinitskii, Alexander; Yost, Andrew J; Mei, Wai-Ning; Fukutani, Keisuke; Chen, Jia-Shiang; Dowben, Peter A Journal: Semiconductor science and technology Issue: Volume 35:Number 6(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗