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1. Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs*Project supported by the National Natural Science Foundation of China (No. 61275107). (August 2015)

4. Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing. Issue 3 (22nd December 2019)