1. A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit. (7th June 2017) Authors: Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin Journal: Semiconductor science and technology Issue: Volume 32:Number 7(2017:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A low resistivity n++-InGaN/p++-GaN polarization-induced tunnel junction. (11th February 2016) Authors: Hu, Weiwei; Zhang, Shuming; Ikeda, Masao; Chen, Yigang; Liu, Jianping; Feng, Meixin; Li, Deyao; Zhang, Feng; Zhou, Kun; Tian, Aiqin; Yang, Hui Journal: Journal of physics Issue: Volume 49:Number 11(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs. (4th May 2021) Authors: Yan, Shumeng; Feng, Meixin; Fan, Shizhao; Zhou, Rui; Tang, Yongjun; Jiang, Tianhao; Liu, Jianxun; Zhou, Yu; Sun, Qian; Yang, Hui Journal: Nanotechnology Issue: Volume 32:Number 30(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern *Project supported by the National Key R&D Program (Nos. 2017YFB0403100, 2017YFB0403101), the National Natural Science Foundation of China (Nos. 61534007, 61404156, 61522407, 61604168, 61775230), the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No. QYZDB-SSW-JSC014), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Key R&D Program of Jiangsu Province (No. BE2017079), the Natural Science Foundation of Jiangsu Province (No. BK20160401), and the China Postdoctoral Science Foundation (No. 2016M591944). Project was also supported by the Open Fund of the State Key Laboratory of Luminescence and Applications (No. SKLA-2016-01), the Open Fund of the State Key Laboratory on Integrated Optoelectronics (Nos. IOSKL2016KF04, IOSKL2016KF07), and the Seed Fund from SINANO, CAS (No. Y5AAQ51001). Project also supported technically by Nano Fabrication Facility, Platform for Characterization & Test, Nano-X of SINANO, CAS. (August 2018) Authors: Feng, Meixin; Sun, Qian; Liu, Jianping; Li, Zengcheng; Zhou, Yu; Gao, Hongwei; Zhang, Shuming; Yang, Hui Journal: Journal of semiconductors Issue: Volume 39:Number 8(2018:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity. (7th April 2015) Authors: Tian, Aiqin; Liu, Jianping; Ikeda, Masao; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Zhou, Kun; Li, Deyao; Zhang, Liqun; Wen, Pengyan; Zhang, Feng; Yang, Hui Journal: Applied physics express Issue: Volume 8:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. Issue 7 (17th December 2019) Authors: Huang, Yingnan; Liu, Jianxun; Sun, Xiujian; Zhan, Xiaoning; Sun, Qian; Gao, Hongwei; Feng, Meixin; Zhou, Yu; Ikeda, Masao; Yang, Hui Journal: CrystEngComm Issue: Volume 22:Issue 7(2020) Page Start: 1160 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Degradation study of InGaN-based laser diodes grown on Si. (9th July 2020) Authors: Tang, Yongjun; Feng, Meixin; Wen, Pengyan; Liu, Jianxun; Wang, Jin; Sun, Xiujian; Sun, Qian; Zhang, Shuming; Sheng, Xing; Ikeda, Masao; Yang, Hui Journal: Journal of physics Issue: Volume 53:Number 39(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN. (September 2020) Authors: Zhou, Rui; Feng, Meixin; Wang, Jin; Zhong, Yaozong; Sun, Qian; Liu, Jianxun; Huang, Yingnan; Zhou, Yu; Gao, Hongwei; Ikeda, Masao; Li, Zhiyun; Zhao, Yanfei; Liu, Tong; Yang, Hui Journal: Solid-state electronics Issue: Volume 171(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates. (3rd March 2016) Authors: Li, Heng; Shi, Yang-Da; Feng, Meixin; Sun, Qian; Lu, Tien-Chang Journal: Applied physics express Issue: Volume 9:Number 4(2016:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates. (19th February 2019) Authors: Ma, Chuanfei; Feng, Meixin; Wang, Jin; Zhou, Rui; Sun, Qian; Liu, Jianxun; Huang, Yingnan; Gao, Hongwei; Zhou, Yu; Yang, Hui Journal: Nanotechnology Issue: Volume 30:Number 18(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗