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4. Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates. Issue 2 (30th October 2019)

7. Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures. Issue 7 (20th November 2019)

9. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019). Issue 4 (19th February 2019)