Author/Creator: Esseni, David - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Esseni, David

11. Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides. (February 2016)

Authors:: Cao, Jiang; Cresti, Alessandro; Esseni, David; Pala, Marco
Journal:: Solid-state electronics
Issue:: Volume 116(2016)
Page Start:: 1
Record Type:: Journal Article
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12. Strain induced mobility modulation in single-layer MoS2. (21st August 2015)

Authors:: Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi; Esseni, David
Journal:: Journal of physics
Issue:: Volume 48:Number 37(2015)
Page Start:
Record Type:: Journal Article
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13. Strain induced mobility modulation in single-layer MoS2. (23rd September 2015)

Authors:: Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi; Esseni, David
Journal:: Journal of physics
Issue:: Volume 48:Number 37(2015)
Page Start:: 666
Record Type:: Journal Article
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14. The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs. (June 2015)

Authors:: Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Journal:: Solid-state electronics
Issue:: Volume 108(2015)
Page Start:: 90
Record Type:: Journal Article
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15. Universal analytic model for tunnel FET circuit simulation. (June 2015)

Authors:: Lu, Hao; Esseni, David; Seabaugh, Alan
Journal:: Solid-state electronics
Issue:: Volume 108(2015)
Page Start:: 110
Record Type:: Journal Article
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