Universal analytic model for tunnel FET circuit simulation. (June 2015)

• Record Type: Journal Article
• Authors: Lu, Hao; Esseni, David; Seabaugh, Alan
• Is Part Of: Solid-state electronics. Volume 108(2015)
• Page Start: 110
• Page End: 117
• Publication Date: 2015-06
• Subjects: Analytic model -- Band-to-band tunneling -- Compact model -- SPICE model -- Steep-slope switch -- Tunnel field-effect transistor (TFET); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2014.12.002
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: A simple analytic model based on the Kane–Sze formula is used to describe the current–voltage characteristics of tunnel field-effect transistors (TFETs). This model captures the unique features of the TFET including the decrease in subthreshold swing with drain current and the superlinear onset of the output characteristic. The model also captures the ambipolar current characteristic at negative gate–source bias and the negative differential resistance for negative drain–source biases. A simple empirical capacitance model is also included to enable circuit simulation. The model has fairly general validity and is not specific to a particular TFET geometry. Good agreement is shown with published atomistic simulations of an InAs double-gate TFET with gate perpendicular to the tunnel junction and with numerical simulations of a broken-gap AlGaSb/InAs TFET with gate in parallel with the tunnel junction.