1. A review of selected topics in physics based modeling for tunnel field-effect transistors. (11th July 2017) Authors: Esseni, David; Pala, Marco; Palestri, Pierpaolo; Alper, Cem; Rollo, Tommaso Journal: Semiconductor science and technology Issue: Volume 32:Number 8(2017:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator. (August 2022) Authors: Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells. (January 2016) Authors: Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli,... Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 92 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions. (6th September 2020) Authors: Gahoi, Amit; Kataria, Satender; Driussi, Francesco; Venica, Stefano; Pandey, Himadri; Esseni, David; Selmi, Luca; Lemme, Max C. Journal: Advanced Electronic Materials Issue: Volume 6:Number 10(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon. (August 2022) Authors: Driussi, Francesco; Esseni, David; Lizzit, Daniel; Palestri, Pierpaolo Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022). (March 2023) Authors: Driussi, Francesco; Esseni, David; Lizzit, Daniel; Palestri, Pierpaolo Journal: Solid-state electronics Issue: Volume 201(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2‐Based Ferroelectric/Dielectric Heterostructures. (5th October 2021) Authors: Hoffmann, Michael; Gui, Mengcheng; Slesazeck, Stefan; Fontanini, Riccardo; Segatto, Mattia; Esseni, David; Mikolajick, Thomas Journal: Advanced functional materials Issue: Volume 32:Number 2(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Macroscopic and microscopic picture of negative capacitance operation in ferroelectric capacitors. Issue 21 (19th May 2021) Authors: Esseni, David; Fontanini, Riccardo Journal: Nanoscale Issue: Volume 13:Issue 21(2021) Page Start: 9641 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions. (February 2023) Authors: Massarotto, Marco; Driussi, Francesco; Affanni, Antonio; Lancaster, Suzanne; Slesazeck, Stefan; Mikolajick, Thomas; Esseni, David Journal: Solid-state electronics Issue: Volume 200(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides. (February 2016) Authors: Cao, Jiang; Cresti, Alessandro; Esseni, David; Pala, Marco Journal: Solid-state electronics Issue: Volume 116(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗