1. A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator. (August 2022) Authors: Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells. (January 2016) Authors: Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli,... Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 92 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon. (August 2022) Authors: Driussi, Francesco; Esseni, David; Lizzit, Daniel; Palestri, Pierpaolo Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022). (March 2023) Authors: Driussi, Francesco; Esseni, David; Lizzit, Daniel; Palestri, Pierpaolo Journal: Solid-state electronics Issue: Volume 201(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions. (February 2023) Authors: Massarotto, Marco; Driussi, Francesco; Affanni, Antonio; Lancaster, Suzanne; Slesazeck, Stefan; Mikolajick, Thomas; Esseni, David Journal: Solid-state electronics Issue: Volume 200(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides. (February 2016) Authors: Cao, Jiang; Cresti, Alessandro; Esseni, David; Pala, Marco Journal: Solid-state electronics Issue: Volume 116(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides. (February 2016) Authors: Cao, Jiang; Cresti, Alessandro; Esseni, David; Pala, Marco Journal: Solid-state electronics Issue: Volume 116(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs. (June 2015) Authors: Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca Journal: Solid-state electronics Issue: Volume 108(2015) Page Start: 90 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Universal analytic model for tunnel FET circuit simulation. (June 2015) Authors: Lu, Hao; Esseni, David; Seabaugh, Alan Journal: Solid-state electronics Issue: Volume 108(2015) Page Start: 110 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗