1. Are Extended Defects a Show Stopper for Future III-V CMOS Technologies. (May 2019) Authors: Claeys, C; Hsu, P-C; He, L; Mols, Y; Langer, R; Waldron, N; Eneman, G; Collaert, N; Heyns, M; Simoen, E Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Junctionless versus inversion-mode lateral semiconductor nanowire transistors. (3rd September 2018) Authors: Veloso, A; Matagne, P; Simoen, E; Kaczer, B; Eneman, G; Mertens, H; Yakimets, D; Parvais, B; Mocuta, D Journal: Journal of physics Issue: Volume 30:Number 38(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. TEM investigations of gate-all-around nanowire devices. (4th November 2019) Authors: Favia, P; Richard, O; Eneman, G; Mertens, H; Arimura, H; Capogreco, E; Hikavyy, A; Witters, L; Kundu, P; Loo, R; Vancoille, E; Bender, H Journal: Semiconductor science and technology Issue: Volume 34:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction. (May 2019) Authors: Hsu, P C (Brent); Simoen, E; Eneman, G; Merckling, C; Alian, A; Langer, R; Collaert, N; Heyns, M Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗