Author/Creator: Douglas, Erica A. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Douglas, Erica A.

1. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. (1st January 2017)

Authors:: Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; Armstrong, Andrew M.; Douglas, Erica A.; Stephenson, Chad A.; Fortune, Torben R.; Kaplar, Robert J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 12(2017)
Page Start:: Q161
Record Type:: Journal Article
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2. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. (9th December 2017)

Authors:: Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; Armstrong, Andrew M.; Douglas, Erica A.; Stephenson, Chad A.; Fortune, Torben R.; Kaplar, Robert J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 12(2017)
Page Start:: Q161
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode. (January 2019)

Authors:: Colón, Albert; Douglas, Erica A.; Pope, Andrew J.; Klein, Brianna A.; Stephenson, Chad A.; Van Heukelom, Michael S.; Tauke-Pedretti, Anna; Baca, Albert G.
Journal:: Solid-state electronics
Issue:: Volume 151(2019)
Page Start:: 47
Record Type:: Journal Article
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4. High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors. (1st August 2017)

Authors:: Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Klein, Brianna A.; Douglas, Erica A.; Sanchez, Carlos A.; Fortune, Torben R.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 11(2017)
Page Start:: S3010
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors. (1st January 2017)

Authors:: Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Klein, Brianna A.; Douglas, Erica A.; Sanchez, Carlos A.; Fortune, Torben R.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 11(2017)
Page Start:: S3010
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗