High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors. (1st August 2017)

• Record Type: Journal Article
• Authors: Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Klein, Brianna A.; Douglas, Erica A.; Sanchez, Carlos A.; Fortune, Torben R.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 11(2017)
• Page Start: S3010
• Page End: S3013
• Publication Date: 2017-08-01
• Subjects: aluminum gallium nitride -- HEMT -- high electron mobility transistor -- power electronics -- Ultra-wide Bandgap; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0041711jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ∼3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al x Ga1- x N HEMTs with x = 0.3 in the channel have been built and evaluated across the −50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest −1.3 V threshold voltage was measured. A very large Ion /Ioff current ratio, greater than 10 8 was demonstrated over the entire temperature range, indicating that off-state leakage is below the measurement limit even at 200°C. Combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.