Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode. (January 2019)

• Record Type: Journal Article
• Authors: Colón, Albert; Douglas, Erica A.; Pope, Andrew J.; Klein, Brianna A.; Stephenson, Chad A.; Van Heukelom, Michael S.; Tauke-Pedretti, Anna; Baca, Albert G.
• Is Part Of: Solid-state electronics. Volume 151(2019)
• Page Start: 47
• Page End: 51
• Publication Date: 2019-01
• Subjects: Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.10.009
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: AlGaN/GaN Schottky diodes were realized with breakdown voltages greater than 9 kV. The AlGaN/GaN Schottky diode characteristics are reported. Figure of Merits for lateral and vertical diodes are compared. Abstract: Al0.26 Ga0.74 N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also fabricated for a comparison of blocking characteristics. The Schottky diode displayed an ideality factor of 1.59 with a Ni/AlGaN zero bias barrier height of 1.18 eV and a flat band barrier height of 1.59 eV. For anode-to-cathode spacings between 10 and 100 μm, an increase in median breakdown voltages from 529 V to 8519 V and median specific on-resistance ( Ron-sp ) from 1.5 to 60.7 mΩ cm 2 was observed with an increase in spacing. The highest performing diode had a lateral figure of merit of 1.37 GW/cm 2 corresponding to a breakdown voltage upwards of 9 kV and a Ron-sp of 59 mΩ cm 2 . This corresponds to the highest Schottky diode breakdown voltage reported thus far with an Al0.26 Ga0.74 N/GaN lateral structure.