Author/Creator: Djezzar, Boualem - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Djezzar, Boualem

1. Detailed total ionizing dose effects on LDMOS transistors. (September 2022)

Authors:: Houadef, Ali; Djezzar, Boualem
Journal:: Microelectronics and reliability
Issue:: Volume 136(2022)
Page Start:
Record Type:: Journal Article
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2. On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices. (April 2015)

Authors:: Djezzar, Boualem; Tahi, Hakim; Benabdelmoumene, Abdelmadjid; Chenouf, Amel; Goudjil, Mohamed; Kribes, Youcef
Journal:: Solid-state electronics
Issue:: Volume 106(2015)
Page Start:: 54
Record Type:: Journal Article
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3. Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate. Issue 10 (10th August 2021)

Authors:: Houadef, Ali; Djezzar, Boualem
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 31:Issue 10(2021)
Page Start:: n/a
Record Type:: Journal Article
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4. Recovery investigation of NBTI-induced traps in n-MOSFET devices. (July 2020)

Authors:: Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Messaoud, Dhiaelhak; Chenouf, Amel; Tahi, Hakim; Boubaaya, Mohamed; Timlelt, Hakima
Journal:: Microelectronics and reliability
Issue:: Volume 110(2020)
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Record Type:: Journal Article
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5. Sizing of the CMOS 6T‐SRAM cell for NBTI ageing mitigation. Issue 4 (30th April 2020)

Authors:: Chenouf, Amel; Djezzar, Boualem; Bentarzi, Hamid; Benabdelmoumene, Abdelmadjid
Journal:: IET circuits, devices & systems
Issue:: Volume 14:Issue 4(2020)
Page Start:: 555
Record Type:: Journal Article
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