1. Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures. Issue 10 (27th March 2021) Authors: Li, Zhengcheng; Wu, Ying; Feng, Boyuan; Li, Yao; Liu, Tong; Feng, Jiagui; Chen, Xiao; Huang, Rong; Xu, Leilei; Li, Zhiyun; Hu, Nan; Li, Fangsen; Jia, Zhitai; Niu, Gang; Guo, Qixin; He, Gaohang; Ding, Sunan Journal: Physica status solidi Issue: Volume 218:Issue 10(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures. Issue 11 (21st October 2019) Authors: Gao, Xue; Yang, Baishun; Devaux, Xavier; Yang, Hongxin; Liu, Jianping; Liang, Shiheng; Stoffel, Mathieu; Pasquier, Ludovic; Hyot, Bérangère; Grenier, Adeline; Bernier, Nicolas; Migot, Sylvie; Mangin, Stéphane; Rinnert, Hervé; Jiang, Chunping; Zeng, Zhongming; Tang, Ning; Sun, Qian; Ding, Sunan; Y... Journal: Nanoscale advances Issue: Volume 1:Issue 11(2019) Page Start: 4466 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High-performance β-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition. (September 2021) Authors: Ma, Yongjian; Feng, Boyuan; Zhang, Xiaodong; Chen, Tiwei; Tang, Wenbo; Zhang, Li; He, Tao; Zhou, Xin; Wei, Xing; Fu, Houqiang; Xu, Kun; Ding, Sunan; Zhang, Baoshun Journal: Vacuum Issue: Volume 191(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy. Issue 4 (6th December 2020) Authors: Feng, Boyuan; Li, Zhengcheng; Cheng, Feiyu; Xu, Leilei; Liu, Tong; Huang, Zengli; Li, Fangsen; Feng, Jiagui; Chen, Xiao; Wu, Ying; He, Gaohang; Ding, Sunan Journal: Physica status solidi Issue: Volume 218:Issue 4(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Large‐scale quantification of aluminum in AlxGa1‐xN alloys by ToF‐SIMS: The benefit of secondary cluster ions. (3rd March 2020) Authors: Huang, Rong; Chen, Xiao; Li, Fangsen; Ding, Sunan; Yang, Hui Other Names: Weng Lu‐Tao guestEditor. Journal: Surface and interface analysis Issue: Volume 52:Number 5(2020) Page Start: 311 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga2O3 single crystal by the EFG method. Issue 20 (6th May 2021) Authors: Fu, Bo; He, Gaohang; Mu, Wenxiang; Li, Yang; Feng, Boyuan; Zhang, Kaihui; Wang, Huanyang; Zhang, Jin; Zhang, Shaojun; Jia, Zhitai; Shi, Yujun; Li, Yanbin; Ding, Sunan; Tao, Xutang Journal: CrystEngComm Issue: Volume 23:Issue 20(2021) Page Start: 3724 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment. (January 2019) Authors: Hao, Hui; Chen, Xiao; Li, Zhengcheng; Shen, Yang; Wang, Hu; Zhao, Yanfei; Huang, Rong; Liu, Tong; Liang, Jian; An, Yuxin; Peng, Qing; Ding, Sunan Journal: Journal of semiconductors Issue: Volume 40:Number 1(2019:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Synthesis, mechanism and characterization of urchin-like Ga2O3 microspheres. Issue 16 (29th March 2022) Authors: Zhang, Jie; Mu, Wenxiang; Bo, Fu; He, Gaohang; Ding, Sunan; Li, Yang; Jia, Zhitai Journal: CrystEngComm Issue: Volume 24:Issue 16(2022) Page Start: 3005 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Temperature-dependent electrical characteristics of β–Ga2O3 trench Schottky barrier diodes via self-reactive etching. (3rd August 2021) Authors: Tang, Wenbo; Zhang, Xiaodong; He, Tao; Ma, Yongjian; Feng, Boyuan; Wei, Xing; He, Gaohang; Zhang, Shengnan; Huo, Xiaoqing; Cai, Yong; Ding, Sunan; Zhang, Xinping; Zhang, Baoshun Journal: Journal of physics Issue: Volume 54:Number 42(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk. (15th August 2022) Authors: Feng, Boyuan; He, Gaohang; Zhang, Xiaodong; Chen, Xiao; Li, Zhengcheng; Xu, Leilei; Huang, Rong; Feng, Jiagui; Wu, Ying; Jia, Zhitai; Yu, Hongyu; Zeng, Zhongming; Ding, Sunan Journal: Materials science in semiconductor processing Issue: Volume 147(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗