Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga2O3 single crystal by the EFG method. Issue 20 (6th May 2021)

• Record Type: Journal Article
• Authors: Fu, Bo; He, Gaohang; Mu, Wenxiang; Li, Yang; Feng, Boyuan; Zhang, Kaihui; Wang, Huanyang; Zhang, Jin; Zhang, Shaojun; Jia, Zhitai; Shi, Yujun; Li, Yanbin; Ding, Sunan; Tao, Xutang
• Is Part Of: CrystEngComm. Volume 23:Issue 20(2021)
• Page Start: 3724
• Page End: 3730
• Publication Date: 2021-05-06
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/d1ce00131k
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : We for the first time built up a laser damage mechanism and in situ observed stacking fault relaxation in a β-Ga2 O3 single crystal. Abstract : We designed an original and effective method to study the laser damage mechanism of a β-Ga2 O3 single crystal grown by the edge-defined film-fed growth (EFG) method. Structure destruction under irradiation with a high light field intensity of 1064 nm using an Nd:YAG laser was systematically studied in the β-Ga2 O3 crystal. Four typical crystal defects, namely, voids, amorphous and nanocrystalline layers and high density stacking faults, were found using a focused ion beam–dual beam scanning electron microscope (FIB-SEM) and a transmission electron microscope (TEM). For the first time, a laser damage mechanism in the β-Ga2 O3 subsurface layer was built up and illuminated by microstructure analysis. The stacking fault relaxation of the β-Ga2 O3 single crystal was observed in situ for the first time under electron beam irradiation. The cathodoluminescence (CL) spectrum further revealed the luminescence properties of the stacking faults.