1. 2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. (4th November 2019) Authors: Irekti, Mohamed-Reda; Lesecq, Marie; Defrance, Nicolas; Okada, Etienne; Frayssinet, Eric; Cordier, Yvon; Tartarin, Jean-Guy; De Jaeger, Jean-Claude Journal: Semiconductor science and technology Issue: Volume 34:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors. (February 2022) Authors: Ngo, Thi Huong; Comyn, Rémi; Chenot, Sébastien; Brault, Julien; Damilano, Benjamin; Vézian, Stéphane; Frayssinet, Eric; Cozette, Flavien; Defrance, Nicolas; Lecourt, François; Labat, Nathalie; Maher, Hassan; Cordier, Yvon Journal: Solid-state electronics Issue: Volume 188(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer. Issue 9 (28th May 2021) Authors: Abou Daher, Mahmoud; Lesecq, Marie; Defrance, Nicolas; Okada, Etienne; Boudart, Bertrand; Guhel, Yannick; Tartarin, Jean Guy; de Jaeger, Jean Claude Journal: Microwave and optical technology letters Issue: Volume 63:Issue 9(2021) Page Start: 2376 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality. (December 2022) Authors: Brezza, Edoardo; Dumas, Paul; Gauthier, Alexis; Hilario, Fanny; Chevalier, Pascal; Gaquière, Christophe; Defrance, Nicolas Journal: Microelectronics and reliability Issue: Volume 139(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses. Issue 7 (28th January 2020) Authors: Frayssinet, Eric; Nguyen, Luan; Lesecq, Marie; Defrance, Nicolas; Garcia Barros, Maxime; Comyn, Rémi; Ngo, Thi Huong; Zielinski, Marcin; Portail, Marc; De Jaeger, Jean-Claude; Cordier, Yvon Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Modeling and characterization of piezoelectric beams based on an aluminum nitride thin‐film layer. Issue 1 (15th October 2015) Authors: Herth, Etienne; Algré, Emmanuelle; Rauch, Jean‐Yves; Gerbedoen, Jean‐Claude; Defrance, Nicolas; Delobelle, Patrick Journal: Physica status solidi Issue: Volume 213:Issue 1(2016:Jan.) Page Start: 114 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor. (13th January 2021) Authors: Cozette, Flavien; Hassan, Bilal; Rodriguez, Christophe; Frayssinet, Eric; Comyn, Rémi; Lecourt, François; Defrance, Nicolas; Labat, Nathalie; Boone, François; Soltani, Ali; Jaouad, Abdelatif; Cordier, Yvon; Maher, Hassan Journal: Semiconductor science and technology Issue: Volume 36:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Recent improvements of flexible GaN‐based HEMT technology. Issue 4 (3rd February 2017) Authors: Mhedhbi, Sarra; Lesecq, Marie; Altuntas, Philippe; Defrance, Nicolas; Cordier, Yvon; Damilano, Benjamin; Tabares Jimenéz, Gema; Ebongue, Abel; Hoel, Virginie Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. (7th December 2020) Authors: Thi Huong, Ngo; Comyn, Rémi; Chenot, Sébastien; Brault, Julien; Damilano, Benjamin; Vézian, Stéphane; Frayssinet, Eric; Cozette, Flavien; Rodriguez, Christophe; Defrance, Nicolas; Lecourt, François; Labat, Nathalie; Maher, Hassan; Cordier, Yvon Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. (7th December 2020) Authors: Thi Huong, Ngo; Comyn, Rémi; Chenot, Sébastien; Brault, Julien; Damilano, Benjamin; Vézian, Stéphane; Frayssinet, Eric; Cozette, Flavien; Rodriguez, Christophe; Defrance, Nicolas; Lecourt, François; Labat, Nathalie; Maher, Hassan; Cordier, Yvon Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗