New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor. (13th January 2021)

• Record Type: Journal Article
• Authors: Cozette, Flavien; Hassan, Bilal; Rodriguez, Christophe; Frayssinet, Eric; Comyn, Rémi; Lecourt, François; Defrance, Nicolas; Labat, Nathalie; Boone, François; Soltani, Ali; Jaouad, Abdelatif; Cordier, Yvon; Maher, Hassan
• Is Part Of: Semiconductor science and technology. Volume 36:Number 3(2021)
• Publication Date: 2021-01-13
• Subjects: high electron mobility transistor -- normally-off -- gallium nitride -- gate recess; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/abd489
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al0.2 Ga0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good performances by using digital etching (DE) process for the gate recess. The gate insulator is deposited using two technics: plasma enhance chemical vapour deposition (sample A) and atomic layer deposition (sample B). Indeed, the two devices present a threshold voltage ( V th ) of +0.4 V and +0.9 V respectively with Δ V th about 0.1 V and 0.05 V extracted from the hysteresis gate capacitance measurement, a gate leakage current below 2 × 10 −10 A mm −1, an I ON / I OFF about 10 8 and a breakdown voltage of V BR = 150 V and 200 V respectively with 1.5 µ m thick buffer layer. All these results are indicating a good barrier surface quality after the gate recess. The DE mechanism is based on chemical dissolution of oxides formed during the first step of DE. Consequently, the process is relatively soft with very low induced physical damages at the barrier layer surface.