Author/Creator: Dee, Chang-Fu - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Dee, Chang-Fu

1. Cu ions irradiation-induced defects in graphene and their effects on optical properties. (April 2022)

Authors:: Muhammad Jahanzaib, Shaikh; Jalil, Abdul; Aisida, Samson O.; Tingkai, Zhao; Dee, Chang-Fu; Sorokin, Michael; Ahmad, Ishaq; Ul-Hamid, Anwar
Journal:: Radiation physics and chemistry
Issue:: Volume 193(2022)
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Record Type:: Journal Article
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2. Curvature contribution on anodic aluminium oxide pore formation: a detailed analytical study. (23rd August 2018)

Authors:: Tiong, Teck-Yaw; Ooi, Lia; Dee, Chang-Fu; Hamzah, Azrul Azlan; Majlis, Burhanuddin Yeop
Journal:: Nanotechnology
Issue:: Volume 29:Number 43(2018)
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Record Type:: Journal Article
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3. Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation. (27th November 2015)

Authors:: Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi
Journal:: Japanese journal of applied physics
Issue:: Volume 55:Number 1(2016:Jan.)Supplement
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4. Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer. (1st August 2022)

Authors:: Tsai, Ping-Yu; Nguyen, Hoang-Tan-Ngoc; Nagarajan, Venkatesan; Lin, Chun-Hsiung; Dee, Chang-Fu; Chen, Shih-Chen; Kuo, Hao-Chung; Lee, Ching-Ting; Chang, Edward Yi
Journal:: ECS journal of solid state science and technology
Issue:: Volume 11:Number 8(2022)
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5. Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulator-semiconductor capacitor through AlN thermal stress. (1st October 2022)

Authors:: Kao, Min-Lu; Lin, Yuan; Weng, You-Chen; Dee, Chang-Fu; Chang, Edward Yi
Journal:: Materials research express
Issue:: Volume 9:Number 10(2022)
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6. Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate. (1st July 2022)

Authors:: Hieu, Le Trung; Chiang, Chung-Han; Anandan, Deepak; Dee, Chang-Fu; Hamzah, Azrul Azlan; Lee, Ching-Ting; Lin, Chung-Hsiung; Chang, Edward Yi
Journal:: Semiconductor science and technology
Issue:: Volume 37:Number 7(2022)
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