Cu ions irradiation-induced defects in graphene and their effects on optical properties. (April 2022)

• Record Type: Journal Article
• Authors: Muhammad Jahanzaib, Shaikh; Jalil, Abdul; Aisida, Samson O.; Tingkai, Zhao; Dee, Chang-Fu; Sorokin, Michael; Ahmad, Ishaq; Ul-Hamid, Anwar
• Is Part Of: Radiation physics and chemistry. Volume 193(2022)
• Publication Date: 2022-04
• Subjects: Graphene -- Electrochemical exfoliation -- Ion beam irradiation -- Optical properties -- Structural properties -- DFT; Radiation chemistry -- Periodicals; Radiometry -- Periodicals; Radiation -- Periodicals; Chimie sous rayonnement -- Périodiques; 539.2
• DOI: 10.1016/j.radphyschem.2022.110008
• Languages: English
• ISSNs: 0969-806X

Abstract

Abstract: The radiation-induced damage in graphene irradiated with 8-MeV Cu 2+ ions at fluences varying from 1 × 10 15 ions/cm 2 to 1 × 10 16 ions/cm 2 was studied. The samples were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and Raman spectra analysis. The number of point defects was observed to increase with the ion fluence until the adjacent point defects started to merge, forming individual amorphous regions. Then a critical stage, when the metallic nature of graphene was transformed into semiconducting, was reached for the first time in an ion beam irradiated graphene. It was noticed that further increase of the ion fluence results in a total conversion of the crystalline graphene structure into the massively disordered layer with decreased optical absorption. Density function theory calculations supported obtained experimental results. Highlights: The damage effect of 8-MeV Cu 2+ irradiation on graphene was investigated. SEM, TEM, HRTEM, and Raman analyses were used to study the ion irradiated graphene. Vacancy and interstitial defects appeared and accumulated at low ion fluences. Highly disordered and diffused structures arose at high fluence irradiations.