1. A Novel Panel of Serum Biomarkers for MPM Diagnosis. (28th February 2017) Authors: Bonotti, A.; Foddis, R.; Landi, S.; Melaiu, O.; De Santi, C.; Giusti, L.; Donadio, E.; Ciregia, F.; Mazzoni, M. R.; Lucacchini, A.; Bovenzi, M.; Comar, M.; Pantani, E.; Pistelli, A.; Cristaudo, A. Other Names: Peluso Marco E. M. Academic Editor. Journal: Disease markers Issue: Volume 2017(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Issue 9 (August 2015) Authors: La Grassa, M.; Meneghini, M.; De Santi, C.; Mandurrino, M.; Goano, M.; Bertazzi, F.; Zeisel, R.; Galler, B.; Meneghesso, G.; Zanoni, E. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1775 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs. (November 2022) Authors: Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias. (September 2019) Authors: Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature. (November 2021) Authors: Chiocchetta, F.; De Santi, C.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Comparison between Cu(In, Ga)Se2 solar cells with different back contacts submitted to current stress. (November 2022) Authors: Bertoncello, M.; Barbato, M.; Caria, A.; Buffolo, M.; De Santi, C.; Rampino, S.; Pattini, F.; Spaggiari, G.; Trivellin, N.; Vogrig, D.; Zanoni, E.; Meneghesso, G.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs. (November 2022) Authors: Masin, F.; De Santi, C.; Lettens, J.; Geenen, F.; Meneghesso, G.; Zanoni, E.; Moens, P.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Current induced degradation study on state of the art DUV LEDs. (September 2018) Authors: Trivellin, N.; Monti, D.; De Santi, C.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 868 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons. (November 2020) Authors: Gao, Z.; Rampazzo, F.; Meneghini, M.; De Santi, C.; Chiocchetta, F.; Marcon, D.; Meneghesso, G.; Zanoni, E. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements. (November 2020) Authors: Piva, F.; De Santi, C.; Buffolo, M.; Taffarel, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗