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Author/Creator Daigo, Yoshiaki

1. Design of a Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Process Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat. (29th October 2020)

Authors:
Hayashi, Masaya; Mamyouda, Takumi; Habuka, Hitoshi; Ishiguro, Akio; Ishii, Shigeaki; Daigo, Yoshiaki; Ito, Hideki; Mizushima, Ichiro; Takahashi, Yoshinao
Journal:
ECS journal of solid state science and technology
Issue:
Volume 9:Number 10(2020)
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Record Type:
Journal Article
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4. Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method. (1st May 2022)

Authors:
Daigo, Yoshiaki; Takada, Yuya; Kurashima, Keisuke; Watanabe, Toru; Ishiguro, Akio; Ishii, Shigeaki; Moriyama, Yoshikazu; Mizushima, Ichiro
Journal:
Japanese journal of applied physics
Issue:
Volume 61:Number SC(2022)
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Record Type:
Journal Article
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6. Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor. (1st August 2022)

Authors:
Takizawa, Yuika; Hayashi, Masaya; Habuka, Hitoshi; Ishiguro, Akio; Ishii, Shigeaki; Watanabe, Toru; Moriyama, Yoshikazu; Daigo, Yoshiaki; Mizushima, Ichiro; Takahashi, Yoshinao
Journal:
ECS journal of solid state science and technology
Issue:
Volume 11:Number 8(2022)
Page Start:
Record Type:
Journal Article
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