Author/Creator: Crupi, Giovanni - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Crupi, Giovanni

11. Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology. (1st March 2022)

Authors:: Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal Ahmed; Velpula, Ravi Teja; Jain, Barsha; Nguyen, Hieu Pham Trung; Crupi, Giovanni
Journal:: Engineering research express
Issue:: Volume 4:Number 1(2022)
Page Start:
Record Type:: Journal Article
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12. Empowering GaN HEMT models: The gateway for power amplifier design. (25th November 2015)

Authors:: Crupi, Giovanni; Vadalà, Valeria; Colantonio, Paolo; Cipriani, Elisa; Caddemi, Alina; Vannini, Giorgio; Schreurs, Dominique M. M.‐P.
Other Names:: Raffo Antonio guestEditor.
Journal:: International journal of numerical modelling
Issue:: Volume 30:Number 1(2017)
Page Start:: n/a
Record Type:: Journal Article
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13. Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches. (3rd April 2022)

Authors:: Jarndal, Anwar; Crupi, Giovanni; Alim, Mohammad Abdul; Vadalà, Valeria; Raffo, Antonio; Vannini, Giorgio
Journal:: International journal of numerical modelling
Issue:: Volume 35:Number 5(2022)
Page Start:: n/a
Record Type:: Journal Article
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14. Equivalent‐circuit–based modeling of the scattering and noise parameters for multi‐finger GaAs pHEMTs. (1st March 2019)

Authors:: Caddemi, Alina; Cardillo, Emanuele; Crupi, Giovanni
Other Names:: Xu Yuehang guestEditor.
Journal:: International journal of numerical modelling
Issue:: Volume 33:Number 3(2020)
Page Start:: n/a
Record Type:: Journal Article
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15. Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology. Issue 10 (3rd August 2020)

Authors:: Alim, Mohammad Abdul; Rezazadeh, Ali A.; Crupi, Giovanni
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 30:Issue 10(2020)
Page Start:: n/a
Record Type:: Journal Article
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16. Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperatures. (11th July 2018)

Authors:: Alim, Mohammad A; Rezazadeh, Ali A; Gaquiere, Christophe; Crupi, Giovanni
Journal:: Semiconductor science and technology
Issue:: Volume 33:Number 8(2018:Aug.)
Page Start:
Record Type:: Journal Article
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17. From the Editor‐in‐Chief. (7th February 2023)

Authors:: Crupi, Giovanni
Journal:: International journal of numerical modelling
Issue:: Volume 36:Number 2(2023)
Page Start:: n/a
Record Type:: Journal Article
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18. GaN HEMT noise modeling based on 50‐Ω noise factor. Issue 4 (April 2015)

Authors:: Crupi, Giovanni; Caddemi, Alina; Raffo, Antonio; Salvo, Giuseppe; Nalli, Andrea; Vannini, Giorgio
Journal:: Microwave and optical technology letters
Issue:: Volume 57:Issue 4(2015:Apr.)
Page Start:: 937
Record Type:: Journal Article
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19. Gate leakage currents model for FinFETs implemented in Verilog‐A for electronic circuits design. (7th March 2014)

Authors:: Garduño, Salvador I.; Alvarado, Joaquín; Cerdeira, Antonio; Estrada, Magali; Kilchytska, Valeriya; Flandre, Denis; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina
Journal:: International journal of numerical modelling
Issue:: Volume 27:Number 5/6(2014)
Page Start:: 846
Record Type:: Journal Article
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20. Generic high‐frequency small‐signal look‐up table model extraction for Si–Ge heterojunction bipolar transistors. (28th January 2014)

Authors:: Homayouni, Seyed Majid; Nauwelaers, Bart; Schreurs, Dominique M. M.‐P.; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina
Journal:: International journal of numerical modelling
Issue:: Volume 27:Number 5/6(2014)
Page Start:: 923
Record Type:: Journal Article
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