Author/Creator: Crupi, Giovanni - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Crupi, Giovanni

1. 2‐mm‐gate‐periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small‐signal standpoint. Issue 6 (30th March 2021)

Authors:: Jarndal, Anwar; Alim, Mohammad Abdul; Raffo, Antonio; Crupi, Giovanni
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 31:Issue 6(2021)
Page Start:: n/a
Record Type:: Journal Article
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2. A link between noise parameters and light exposure in GaAs pHEMT's. (March 2015)

Authors:: Caddemi, Alina; Crupi, Giovanni; Salvo, Giuseppe
Journal:: Solid-state electronics
Issue:: Volume 105(2015)
Page Start:: 16
Record Type:: Journal Article
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3. A review on the artificial neural network applications for small‐signal modeling of microwave FETs. (6th August 2019)

Authors:: Marinković, Zlatica; Crupi, Giovanni; Caddemi, Alina; Marković, Vera; Schreurs, Dominique M.M.‐P.
Other Names:: Xu Yuehang guestEditor.
Journal:: International journal of numerical modelling
Issue:: Volume 33:Number 3(2020)
Page Start:: n/a
Record Type:: Journal Article
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4. A surface‐potential‐based model for silicon nanowire junctionless field‐effect transistors including interface traps. (4th March 2014)

Authors:: Deng, Ye; Fan, Xiao‐ya; Han, Ru; Li, Cong; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina
Journal:: International journal of numerical modelling
Issue:: Volume 27:Number 5/6(2014)
Page Start:: 896
Record Type:: Journal Article
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5. A surface‐potential‐based MOSFET compact model accounting for random doping fluctuations. (17th December 2013)

Authors:: Donati Guerrieri, S.; Cappelluti, Federica; Bonani, Fabrizio; Ghione, Giovanni; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina
Journal:: International journal of numerical modelling
Issue:: Volume 27:Number 5/6(2014)
Page Start:: 748
Record Type:: Journal Article
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6. Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation. (30th September 2013)

Authors:: Chen, Yongbo; Xu, Ruimin; Crupi, Giovanni; Schreurs, Dominique; Caddemi, Alina
Journal:: International journal of numerical modelling
Issue:: Volume 27:Number 5/6(2014)
Page Start:: 822
Record Type:: Journal Article
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7. Auto‐encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices. Issue 11 (3rd August 2022)

Authors:: Bhargava, Gaurav; Vadalà, Valeria; Majumdar, Shubhankar; Crupi, Giovanni
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 32:Issue 11(2022)
Page Start:: n/a
Record Type:: Journal Article
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8. Black‐box noise modeling of GaAs HEMTs under illumination. (13th February 2015)

Authors:: Colangeli, Sergio; Ciccognani, Walter; Limiti, Ernesto; Caddemi, Alina; Crupi, Giovanni; Salvo, Giuseppe; Caddemi, Alina; Caddemi, Ernesto
Journal:: International journal of numerical modelling
Issue:: Volume 28:Number 6(2015:Nov./Dec.)
Page Start:: 698
Record Type:: Journal Article
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9. Comparative analysis of microwave low‐noise amplifiers under laser illumination. Issue 10 (27th July 2016)

Authors:: Caddemi, Alina; Cardillo, Emanuele; Crupi, Giovanni
Journal:: Microwave and optical technology letters
Issue:: Volume 58:Issue 10(2016:Oct.)
Page Start:: 2437
Record Type:: Journal Article
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10. Current‐gain in FETs beyond cut‐off frequency. Issue 12 (19th October 2018)

Authors:: Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina
Journal:: Microwave and optical technology letters
Issue:: Volume 60:Issue 12(2018:Dec.)
Page Start:: 3023
Record Type:: Journal Article
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