Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches. (3rd April 2022)

• Record Type: Journal Article
• Authors: Jarndal, Anwar; Crupi, Giovanni; Alim, Mohammad Abdul; Vadalà, Valeria; Raffo, Antonio; Vannini, Giorgio
• Is Part Of: International journal of numerical modelling. Volume 35:Number 5(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-04-03
• Subjects: electron device -- equivalent circuit -- gallium nitride -- non‐quasi‐static effects -- optimization -- scattering parameter measurements; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.3008
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: This work focuses on the equivalent‐circuit modeling of microwave field‐effect transistors. Although the purely direct approach allows obtaining a good prediction accuracy in a straightforward way without the need of any optimization, optimization algorithms are often used to achieve an improved accuracy at the cost of a higher modeling complexity. The pros and cons of empowering the direct approach with optimization algorithms are discussed by focusing the analysis on a 1000‐μm periphery gallium nitride high‐electron‐mobility transistor on silicon carbide substrate. The comparison between the two different approaches is performed through an extensive analysis of the frequency‐dependent behavior of the small‐signal characteristics.