A link between noise parameters and light exposure in GaAs pHEMT's. (March 2015)

• Record Type: Journal Article
• Authors: Caddemi, Alina; Crupi, Giovanni; Salvo, Giuseppe
• Is Part Of: Solid-state electronics. Volume 105(2015)
• Page Start: 16
• Page End: 20
• Publication Date: 2015-03
• Subjects: GaAs HEMT -- Light exposure -- Microwave measurements -- Noise parameters; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2014.11.021
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: DC and microwave characterization of an advanced GaAs pHEMT. Investigation of transistor performance under optical illumination. Scattering and noise parameter measurements. Abstract: This work presents an experimental investigation and relevant discussion of the link existing between noise parameters and light exposure of GaAs pseudomorphic HEMT's at microwave frequencies. A 100 μm gate width AlGaAs/InGaAs/GaAs heterostructure device has been illuminated with CW visible laser light (650 nm) and a systematic analysis has been performed by examining the device behavior under controlled bias current conditions. Significant effects have been brought to evidence in the 2–26 GHz noise parameters F min, Γ opt and R n measured in the different conditions. A clear correlation has been found between the level of degradation of the noise parameter behavior and the light exposure.