1. Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers. (June 2017) Authors: Huang, Jiayi; Chang-Liao, Kuei-Shu; Li, Chen-Chien; Li, Yan-Lin; Tsai, Chia-Chi; Ku, Chao-Chen; Chen, Po-Yen; Huang, Tse-Jung; Wu, Tzung-Yu; Chu, Fu-Chuan; Yi, Shih-Han Journal: Vacuum Issue: Volume 140(2017) Page Start: 24 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Enhanced performance of InGaN-based light-emitting diodes grown on volcano-shaped patterned sapphire substrates with embedded SiO2. Issue 83 (9th September 2015) Authors: You, Yao-Hong; Chu, Fu-Chuan; Hsieh, Han-Cheng; Wu, Wen-Hsin; Lee, Ming-Lun; Kuan, Chieh-Hsiung; Lin, Ray-Ming Journal: RSC advances Issue: Volume 5:Issue 83(2015) Page Start: 67809 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. (December 2017) Authors: Li, Yan-Lin; Chang-Liao, Kuei-Shu; Chang, Yu-Wei; Huang, Tse-Jung; Li, Chen-Chien; Gu, Zhao-Chen; Chen, Po-Yen; Wu, Tzung-Yu; Huang, Jiayi; Chu, Fu-Chuan; Yi, Shih-Han Journal: Microelectronics and reliability Issue: Volume 79(2017) Page Start: 136 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes. (10th July 2014) Authors: Xu, Bing; Dai, Hai Tao; Wang, Shu Guo; Chu, Fu-Chuan; Huang, Chou-Hsiung; Yu, Sheng-Fu; Zhao, Jun Liang; Sun, Xiao Wei; Lin, Ray-Ming Other Names: Chang Sheng-Po Academic Editor. Journal: International journal of photoenergy Issue: Volume 2014(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗