Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers. (June 2017)

• Record Type: Journal Article
• Authors: Huang, Jiayi; Chang-Liao, Kuei-Shu; Li, Chen-Chien; Li, Yan-Lin; Tsai, Chia-Chi; Ku, Chao-Chen; Chen, Po-Yen; Huang, Tse-Jung; Wu, Tzung-Yu; Chu, Fu-Chuan; Yi, Shih-Han
• Is Part Of: Vacuum. Volume 140(2017)
• Page Start: 24
• Page End: 29
• Publication Date: 2017-06
• Subjects: Ge MOS devices -- In-situ -- Plasma treatment -- Interfacial layer; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2016.10.004
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Electrical and reliability characteristics of Ge pMOSFETs with H2, NH3 and NH3 +H2 plasma treatments were studied in this work. The GeOx interfacial layer (IL) formation and HfON dielectric deposition were performed in atomic layer deposition (ALD) chamber. H2 and NH3 plasma treatments were in-situ performed on GeOx IL in ALD chamber. The equivalent oxide thickness (EOT) can be scaled down by H2 plasma treatment, and the interface trap density (Dit ) is reduced with NH3 plasma treatment. The enhanced on current of devices with H2 plasma treatment can be attributed to its lower EOT. Reliability characteristics of devices are improved by H2 plasma treatment on IL due to effects of H + passivation at GeO2 /Ge interface. A Ge pMOSFET with an EOT of ∼0.47 nm and a high hole mobility of ∼401 cm 2 /V-s is demonstrated in this work by combining NH3 and H2 plasma treatments (NH3 +H2 ). Highlights: H2 and NH3 plasma treatments are in-situ performed on interfacial layer in ALD chamber. Equivalent Oxide Thickness (EOT) can be scaled down by H2 plasma treatment, and Dit is reduced with NH3 one. Reliability characteristics of devices are improved with H2 plasma treatment on Interface Layer. An EOT of ∼0.47 nm and hole mobility of ∼401 cm 2 /V-s are demonstrated.