Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. (December 2017)

• Record Type: Journal Article
• Authors: Li, Yan-Lin; Chang-Liao, Kuei-Shu; Chang, Yu-Wei; Huang, Tse-Jung; Li, Chen-Chien; Gu, Zhao-Chen; Chen, Po-Yen; Wu, Tzung-Yu; Huang, Jiayi; Chu, Fu-Chuan; Yi, Shih-Han
• Is Part Of: Microelectronics and reliability. Volume 79(2017)
• Page Start: 136
• Page End: 139
• Publication Date: 2017-12
• Subjects: Ge MOS device -- Equivalent oxide thickness -- Interfacial layer -- Reliability -- Cap layer; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.10.018
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Ultralow equivalent oxide thickness and excellent reliability characteristics in Ge MOS devices with ZrO2 gate dielectrics are achieved by capping Hf or Zr on interfacial layer. Device with a Hf-cap layer demonstrates the lowest interface trap density and stress-induced leakage current. On the other hand, device with a Zr-cap layer exhibits the lowest hysteresis effects and stress-induced voltage shifts. The HfGeOx IL of high quality and ZrGeOx IL with few oxide traps are promising to improve reliability characteristics in Ge MOS devices. Highlights: Reliability characteristics in Ge MOS devices are improved by capping Hf or Zr on IL. The improvement can be due to high quality HfGeOx or ZrGeOx with few oxide traps. Device with Hf-cap layer demonstrates the lowest Dit and stress-induced leakage current. Device with Zr-cap layer has the lowest hysteresis and stress-induced voltage shifts.