1. (Invited) Simulation of Radiation Effects in AlGaN/GaN HEMTs. (13th April 2015) Authors: Patrick, Erin; Choudhury, Mohua; Ren, Fan; Pearton, Stephen J.; Law, Mark E Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Optimization of GaN-Based HEMTs for Chemical Sensing: A Simulation Study. (16th August 2016) Authors: Sciullo, Madeline; Choudhury, Mohua; Patrick, Erin; Law, Mark E Journal: ECS transactions Issue: Volume 75:Number 16(2016) Page Start: 259 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Simulation of Radiation Effects in AlGaN/GaN HEMTs. (1st January 2015) Authors: Patrick, Erin E.; Choudhury, Mohua; Ren, Fan; Pearton, Stephen J.; Law, Mark E. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 3(2015) Page Start: Q21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Simulation of Radiation Effects in AlGaN/GaN HEMTs. (24th January 2015) Authors: Patrick, Erin E.; Choudhury, Mohua; Ren, Fan; Pearton, Stephen J.; Law, Mark E. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 3(2015) Page Start: Q21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Simulation of the pH Sensing Capability of an Open-Gate GaN-Based Transistor. (11th September 2015) Authors: Patrick, Erin; Choudhury, Mohua; Law, Mark E Journal: ECS transactions Issue: Volume 69:Number 13(2015) Page Start: 15 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗