Optimization of GaN-Based HEMTs for Chemical Sensing: A Simulation Study. (16th August 2016)

• Record Type: Journal Article
• Authors: Sciullo, Madeline; Choudhury, Mohua; Patrick, Erin; Law, Mark E
• Is Part Of: ECS transactions. Volume 75:Number 16(2016)
• Page Start: 259
• Page End: 264
• Publication Date: 2016-08-16
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07516.0259ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Understanding the influence of device parameters on optimization of GaN-based High-Electron-Mobility Transistors (HEMT)s is crucial for development of effective and power-efficient sensors. This research provides a simulation study that shows trends for optimum sensor performance with regard to drain bias and gate length. TCAD simulations model a pH sensor as a general example.