Simulation of the pH Sensing Capability of an Open-Gate GaN-Based Transistor. (11th September 2015)

• Record Type: Journal Article
• Authors: Patrick, Erin; Choudhury, Mohua; Law, Mark E
• Is Part Of: ECS transactions. Volume 69:Number 13(2015)
• Page Start: 15
• Page End: 23
• Publication Date: 2015-09-11
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06913.0015ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Given their nontoxicity and chemical inertness in biological or corrosive environments, heterostructure transistors based on the AlGaN/GaN material structure are advantageous for chemical and biological sensors. They offer notably high sensitivity as a result of the very large gain and transconductance. Prior research on this technology has demonstrated its potential applications in prostate and breast cancer detection and pH sensing. However, due limited modeling and simulation support, the device design has not been optimized. We build upon a TCAD simulation framework (FLOODS) specifically suited for III-V device simulation that is capable of coupling reaction-dependent physics at the electrolyte/semiconductor interface to the physics governing semiconductor device performance. This paper outlines the simulation methodology for a pH sensor using an open-gate AlGaN/GaN High Electron Mobility Transistor (HEMT).