1. Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition. Issue 12 (4th May 2020) Authors: Kwak, Taemyung; Lee, Jonggun; Yoo, Geunho; Shin, Heejin; Choi, Uiho; So, Byeongchan; Kim, Seongwoo; Nam, Okhyun Other Names: Lee Cheon guestEditor.; Choi Ji-Won guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 12(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method. Issue 7 (23rd December 2019) Authors: Lee, Juhun; Jang, Hyunwoo; Kwak, Taemyung; Choi, Uiho; So, Byeongchan; Nam, Okhyun Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire. Issue 7 (4th December 2019) Authors: Choi, Uiho; Kim, Hyun-Seop; Lee, Kyeongjae; Jung, Donghyeop; Kwak, Taemyung; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Kang, Myoung-Jin; Seo, Kwang-Seok; Han, Min; Choi, Seokgyu; Lee, Sangmin; Cha, Ho-Young; Nam, Okhyun Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN:Si/AlN DH-HEMT structure. (January 2023) Authors: Jung, Donghyeop; Kim, Minho; Choi, Uiho; Kim, Keono; Nam, Okhyun Journal: Solid-state electronics Issue: Volume 199(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate. Issue 6 (15th February 2023) Authors: Han, Sanghun; Kwak, Taemyung; Choi, Uiho; Kang, Hyeonu; Yoo, Geunho; Kim, Seong-woo; Nam, Okhyun Journal: Physica status solidi Issue: Volume 220:Issue 6(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity. (March 2020) Authors: Lee, Juhun; Jang, Hyunwoo; Kwak, Taemyung; Choi, Uiho; So, Byeongchan; Nam, Okhyun Journal: Solid-state electronics Issue: Volume 165(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT. (6th November 2019) Authors: Choi, Uiho; Lee, Kyeongjae; Kwak, Taemyung; Jung, Donghyeop; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Kim, Hyun-Seop; Cha, Ho-Young; Kang, Myoung-Jin; Seo, Kwang-Seok; Nam, Okhyun Journal: Japanese journal of applied physics Issue: Volume 58:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers. Issue 62 (16th October 2018) Authors: So, Byeongchan; Kim, Jinwan; Kwak, Taemyung; Kim, Taeyoung; Lee, Joohyoung; Choi, Uiho; Nam, Okhyun Journal: RSC advances Issue: Volume 8:Issue 62(2018) Page Start: 35528 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy. Issue 40 (5th August 2016) Authors: Woo, Seohwi; Lee, Sangil; Choi, Uiho; Lee, Hyunjae; Kim, Minho; Han, Jaiyong; Nam, Okhyun Journal: CrystEngComm Issue: Volume 18:Issue 40(2016) Page Start: 7690 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor. Issue 7 (4th December 2019) Authors: Choi, Uiho; Jung, Donghyeop; Lee, Kyeongjae; Kwak, Taemyung; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Nam, Okhyun Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗