Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers. Issue 62 (16th October 2018)

• Record Type: Journal Article
• Authors: So, Byeongchan; Kim, Jinwan; Kwak, Taemyung; Kim, Taeyoung; Lee, Joohyoung; Choi, Uiho; Nam, Okhyun
• Is Part Of: RSC advances. Volume 8:Issue 62(2018)
• Page Start: 35528
• Page End: 35533
• Publication Date: 2018-10-16
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c8ra06982d
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : DUV-LEDs with a single EBL, graded EBL, and graded superlattice EBL were demonstrated using the high-temperature metal organic chemical vapor deposition system. A DUV-LED with a GSL-EBL showed improved carrier injection into the multi-quantum well region. Abstract : A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed via simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a single EBL (S-EBL), graded EBL (G-EBL), and GSL-EBL. The variation in the energy band diagram around the EBL region indicates that the introduction of GSL-EBL is very effective in enhancing carrier injection. Besides, all DUV-LEDs emitting at 280 nm are grown in the high temperature metal organic chemical deposition system. It is confirmed that the optical power of the DUV-LED with the GSL-EBL is significantly higher than that of the DUV-LED with the S-EBL and G-EBL.