Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate. Issue 6 (15th February 2023)

• Record Type: Journal Article
• Authors: Han, Sanghun; Kwak, Taemyung; Choi, Uiho; Kang, Hyeonu; Yoo, Geunho; Kim, Seong-woo; Nam, Okhyun
• Is Part Of: Physica status solidi. Volume 220:Issue 6(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-15
• Subjects: diamond Schottky barrier diode (SBD) -- hafnium oxides -- Schottky barrier height; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202200680
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, the growth of lateral‐structure p‐type diamond Schottky barrier diodes (SBDs) on a heteroepitaxial diamond substrate using a thin atomic‐layer‐deposited hafnium oxide ( HfO 2 ) interfacial layer is demonstrated. The diamond SBD is grown using the microwave plasma chemical vapor deposition (MPCVD) with 1 kW microwave power at 2.45 GHz. Two kinds of samples are grown on heteroepitaxial diamond substrates under the same growth conditions for identical epi structures. And the 10 nm thickness of HfO 2 is used as an insulator for MIS SBD. The effects of the HfO 2 interlayer on the electrical properties of the SBDs are investigated using current–voltage ( I–V curve) and capacitance–voltage ( C–V curve) characteristics at room temperature. Compared with the metal–semiconductor (MS) SBD, the metal–insulator–semiconductor (MIS) SBD exhibited a 10 4 A lower reverse leakage current. The Schottky barrier height in the MIS SBD is almost 0.2 eV higher than in the MS SBD. The insertion of the HfO 2 interlayer reduces the inhomogeneous Schottky barrier height and enhances the barrier height because of the reduction in the interface state density. Abstract : The effect of a thin hafnium oxide ( HfO 2 ) interlayer on the electrical properties of metal–insulator–semiconductor (MIS) structure Schottky barrier diode (SBD) which is grown on a heteroepitaxial diamond substrate is investigated. Despite nonepitaxial crystallites (NCs) or hillocks at Schottky electrode, a low leakage current of 10 − 9 A and barrier height of 1.0 eV are obtained.