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Author/Creator Chini, A.

2. Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Issue 9 (August 2015)

Authors:
Bisi, D.; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, F.; Chini, A.; Soci, F.; Pantellini, A.; Lanzieri, C.; Gamarra, P.; Lacam, C.; Tordjman, M.; di Forte-Poisson, M.-A.; De Salvador, D.; Bazzan, M.; Meneghesso, G.; Zanoni, E.
Journal:
Microelectronics and reliability
Issue:
Volume 55:Issue 9/10(2015)
Page Start:
1662
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

5. On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. (September 2018)

Authors:
Rzin, M.; Chini, A.; De Santi, C.; Meneghini, M.; Hugger, A.; Hollmer, M.; Stieglauer, H.; Madel, M.; Splettstößer, J.; Sommer, D.; Grünenpütt, J.; Beilenhoff, K.; Blanck, H.; Chen, J.-T.; Kordina, O.; Meneghesso, G.; Zanoni, E.
Journal:
Microelectronics and reliability
Issue:
Volume 88/90(2018)
Page Start:
397
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗