1. An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces. Issue 14 (8th April 2019) Authors: Brière, Gauthier; Ni, Peinan; Héron, Sébastien; Chenot, Sébastien; Vézian, Stéphane; Brändli, Virginie; Damilano, Benjamin; Duboz, Jean‐Yves; Iwanaga, Masanobu; Genevet, Patrice Journal: Advanced optical materials Issue: Volume 7:Issue 14(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors. (February 2022) Authors: Ngo, Thi Huong; Comyn, Rémi; Chenot, Sébastien; Brault, Julien; Damilano, Benjamin; Vézian, Stéphane; Frayssinet, Eric; Cozette, Flavien; Defrance, Nicolas; Lecourt, François; Labat, Nathalie; Maher, Hassan; Cordier, Yvon Journal: Solid-state electronics Issue: Volume 188(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Development of technological building blocks for the monolithic integration of ammonia‐MBE‐grown GaN‐HEMTs with silicon CMOS. Issue 4 (29th February 2016) Authors: Comyn, Rémi; Cordier, Yvon; Chenot, Sébastien; Jaouad, Abdelatif; Maher, Hassan; Aimez, Vincent Journal: Physica status solidi Issue: Volume 213:Issue 4(2016:Apr.) Page Start: 917 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate. Issue 10 (14th July 2015) Authors: Damilano, Benjamin; Brochen, Stéphane; Brault, Julien; Hossain, Tasnia; Réveret, François; Frayssinet, Eric; Chenot, Sébastien; Courville, Aimeric; Cordier, Yvon; Semond, Fabrice Journal: Physica status solidi Issue: Volume 212:Issue 10(2015:Oct.) Page Start: 2297 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Influence of metal‐organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer. Issue 4 (16th November 2016) Authors: Frayssinet, Eric; Leclaire, Paul; Mohdad, Jad; Latrach, Soumaya; Chenot, Sébastien; Nemoz, Maud; Damilano, Benjamin; Cordier, Yvon Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder. Issue 2 (23rd October 2014) Authors: Desrat, Wilfried; Chmielowska, Magdalena; Chenot, Sébastien; Cordier, Yvon; Jouault, Benoît Journal: European physical journal Issue: Number 68:Issue 2(2014:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Proton Energy Loss in GaN. Issue 8 (11th July 2021) Authors: Duboz, Jean-Yves; Zucchi, Julie; Frayssinet, Eric; Chenot, Sébastien; Hugues, Maxime; Grini, Jean-Claude; Hérault, Joël Journal: Physica status solidi Issue: Volume 258:Issue 8(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties. Issue 5 (21st January 2015) Authors: Coulon, Pierre‐Marie; Alloing, Blandine; Brändli, Virginie; Lefebvre, Denis; Chenot, Sébastien; Zúñiga‐Pérez, Jesús Journal: Physica status solidi Issue: Volume 252:Issue 5(2015:May) Page Start: 1096 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. (7th December 2020) Authors: Thi Huong, Ngo; Comyn, Rémi; Chenot, Sébastien; Brault, Julien; Damilano, Benjamin; Vézian, Stéphane; Frayssinet, Eric; Cozette, Flavien; Rodriguez, Christophe; Defrance, Nicolas; Lecourt, François; Labat, Nathalie; Maher, Hassan; Cordier, Yvon Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. (7th December 2020) Authors: Thi Huong, Ngo; Comyn, Rémi; Chenot, Sébastien; Brault, Julien; Damilano, Benjamin; Vézian, Stéphane; Frayssinet, Eric; Cozette, Flavien; Rodriguez, Christophe; Defrance, Nicolas; Lecourt, François; Labat, Nathalie; Maher, Hassan; Cordier, Yvon Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗