Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties. Issue 5 (21st January 2015)

• Record Type: Journal Article
• Authors: Coulon, Pierre‐Marie; Alloing, Blandine; Brändli, Virginie; Lefebvre, Denis; Chenot, Sébastien; Zúñiga‐Pérez, Jesús
• Is Part Of: Physica status solidi. Volume 252:Issue 5(2015:May)
• Page Start: 1096
• Page End: 1103
• Publication Date: 2015-01-21
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201451589
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201451589-sec-0001" sec-type="section"> <p>Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the <italic>c</italic>‐axis, could be further controlled using appropriate growth temperatures and H₂/N₂ ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.</p> </sec> </abstract>