1. A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction. (February 2019) Authors: Shi, Yijun; Chen, Wanjun; Wu, Shan; Liu, Chao; Xia, Yun; Li, Maolin; Cui, Xingtao; Chen, Tangsheng; Zhou, Qi; Deng, Xiaochuan; Zhang, Bo Journal: Superlattices and microstructures Issue: Volume 126(2019) Page Start: 174 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4 as the gate dielectric. (9th October 2015) Authors: Gao, Tao; Xu, Ruimin; Zhang, Kai; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng; Hao, Yue Journal: Semiconductor science and technology Issue: Volume 30:Number 11(2015:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE. Issue 5 (9th February 2016) Authors: Gao, Tao; Xu, Ruimin; Zhang, Dongguo; Li, Zhonghui; Peng, Daqing; Don, Xun; Chen, Tangsheng Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor. Journal: Physica status solidi Issue: Volume 13:Issue 5/6(2016:May) Page Start: 214 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. GaN HEMT with AlGaN back barrier for high power MMIC switch application. (1st January 2015) Authors: Ren, Chunjiang; Shen, Hongchang; Li, Zhonghui; Chen, Tangsheng; Zhang, Bin; Gao, Tao Journal: Journal of semiconductors Issue: Volume 36:Number 1(2015:Jan.) Page Start: 014008 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology. (10th January 2017) Authors: Zhang, Kai; Kong, Cen; Zhou, Jianjun; Kong, Yuechan; Chen, Tangsheng Journal: Applied physics express Issue: Volume 10:Number 2(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2. (19th March 2019) Authors: Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Zhang, Yachao; Chen, Tangsheng; Zhang, Kai; Wang, Yi; Dang, Kui; Bian, Zhaoke; Duan, Xiaoling; Ning, Jing; Zhao, Shenglei; Hao, Yue Journal: Applied physics express Issue: Volume 12:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics. (10th August 2015) Authors: Cui, Yang; Xin, Run; Yu, Zhihao; Pan, Yiming; Ong, Zhun‐Yong; Wei, Xiaoxu; Wang, Junzhuan; Nan, Haiyan; Ni, Zhenhua; Wu, Yun; Chen, Tangsheng; Shi, Yi; Wang, Baigeng; Zhang, Gang; Zhang, Yong‐Wei; Wang, Xinran Journal: Advanced materials Issue: Volume 27:Number 35(2015) Page Start: 5230 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure. (December 2016) Authors: Wang, Wen; Yu, Xinxin; Zhou, Jianjun; Chen, Dunjun; Zhang, Kai; Kong, Cen; Lu, Haiyan; Kong, Yuechan; Li, Zhonghui; Chen, Tangsheng Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure. (December 2016) Authors: Wang, Wen; Yu, Xinxin; Zhou, Jianjun; Chen, Dunjun; Zhang, Kai; Kong, Cen; Lu, Haiyan; Kong, Yuechan; Li, Zhonghui; Chen, Tangsheng Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Integrated enhancement/depletion‐mode GaN MIS‐HEMTs for high‐speed mixed‐signal applications. Issue 5 (3rd February 2016) Authors: Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Zhang, Kai; Kong, Cen; Peng, Daqing; Chen, Tangsheng Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1241 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗