1. A Peanut Shell Inspired Scalable Synthesis of Three-Dimensional Carbon Coated Porous Silicon Particles as an Anode for Lithium-Ion Batteries. (20th February 2015) Authors: Han, Xiang; Chen, Huixin; Liu, Jingjing; Liu, Hanhui; Wang, Peng; Huang, Kai; Li, Cheng; Chen, Songyan; Yang, Yong Journal: Electrochimica acta Issue: Volume 156(2015) Page Start: 11 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A review: wafer bonding of Si-based semiconductors. (3rd June 2020) Authors: Ke, Shaoying; Li, Dongke; Chen, Songyan Journal: Journal of physics Issue: Volume 53:Number 32(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. All solid thick oxide cathodes based on low temperature sintering for high energy solid batteries. Issue 9 (11th August 2021) Authors: Han, Xiang; Wang, Shanyu; Xu, Yaobin; Zhong, Guiming; Zhou, Yang; Liu, Bo; Jiang, Xiaoyu; Wang, Xiang; Li, Yun; Zhang, Ziqi; Chen, Songyan; Wang, Chongmin; Yang, Yong; Zhang, Wenqing; Wang, Junlan; Liu, Jun; Yang, Jihui Journal: Energy & environmental science Issue: Volume 14:Issue 9(2021) Page Start: 5044 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices. (18th March 2016) Authors: Chi, Xiaowei; Lan, Xiaoling; Lu, Chao; Hong, Haiyang; Li, Cheng; Chen, Songyan; Lai, Hongkai; Huang, Wei; Xu, Jianfang Journal: Materials research express Issue: Volume 3:Number 3(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer. (September 2022) Authors: Ke, Shaoying; Li, Jiahui; Wang, Jie; Zhou, Jinrong; Huang, Zhiwei; Jiao, Jinlong; Ji, Ruoyun; Chen, Songyan Journal: Vacuum Issue: Volume 203(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer. (13th September 2017) Authors: Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan Journal: Journal of physics Issue: Volume 50:Number 40(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Capitalization of interfacial AlON interactions to achieve stable binder-free porous silicon/carbon anodes. Issue 17 (9th April 2018) Authors: Han, Xiang; Zhang, Ziqi; You, Run; Zheng, Guorui; Li, Cheng; Chen, Songyan; Yang, Yong Journal: Journal of materials chemistry Issue: Volume 6:Issue 17(2018) Page Start: 7449 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Carbon-coated Si micrometer particles binding to reduced graphene oxide for a stable high-capacity lithium-ion battery anode. Issue 45 (4th November 2016) Authors: Han, Xiang; Chen, Huixin; Zhang, Ziqi; Huang, Donglin; Xu, Jianfang; Li, Cheng; Chen, Songyan; Yang, Yong Journal: Journal of materials chemistry Issue: Volume 4:Issue 45(2016) Page Start: 17757 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering. (December 2018) Authors: Wang, Yisen; Zhang, Lu; Huang, Zhiwei; Li, Cheng; Chen, Songyan; Huang, Wei; Xu, Jianfang; Wang, Jianyuan Journal: Materials science in semiconductor processing Issue: Volume 88(2018) Page Start: 28 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer. (27th July 2021) Authors: Li, Zongpei; Huang, Donglin; Jiao, Jinlong; Wang, Ziwei; Li, Cheng; Huang, Wei; Ke, Shaoying; Chen, Songyan Journal: Semiconductor science and technology Issue: Volume 36:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗