An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices. (18th March 2016)

• Record Type: Journal Article
• Authors: Chi, Xiaowei; Lan, Xiaoling; Lu, Chao; Hong, Haiyang; Li, Cheng; Chen, Songyan; Lai, Hongkai; Huang, Wei; Xu, Jianfang
• Is Part Of: Materials research express. Volume 3:Number 3(2016)
• Publication Date: 2016-03-18
• Subjects: Ge MOS -- RPALD -- N2 plasma pretreatment -- HfO2/Ge interface; 73.40. Qv -- 73.50. Mx; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/3/3/035012
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: In situ remote N2 plasma pretreatment of Ge substrate before deposition of HfO2 is proved effective to reduce GeOx interlayer at the HfO2 /Ge interface, resulting in a smaller capacitance equivalent oxide thickness, lower interface trap density and leakage current density for the metal/HfO2 /n-Ge capacitors. However, it has no obvious impact on the metal/HfO2 /p-Ge capacitors, showing a much higher interface trap density than that on n-Ge. The high equivalent permittivity of the HfO2 gate stacks (∼24.2) confirmed the removal of GeOx interlayer by N2 plasma pretreatment. In situ remote N2 plasma pretreatment is demonstrated perspective to make metal/HfO2 /n-Ge MOSFET with scaling capacitance equivalent oxide thickness.