1. A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs. (21st August 2018) Authors: Lin, Yen-Ku; Bergsten, Johan; Leong, Hector; Malmros, Anna; Chen, Jr-Tai; Chen, Ding-Yuan; Kordina, Olof; Zirath, Herbert; Chang, Edward Yi; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 33:Number 9(2018:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices. (23rd August 2016) Authors: Chen, Jr-Tai; Janzén, Erik; Rorsman, Niklas; Thorsell, Mattias; Andersson, Mats; Kordina, Olof Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress. (November 2021) Authors: Gao, Zhan; Rampazzo, Fabiana; Meneghini, Matteo; Modolo, Nicola; De Santi, Carlo; Blanck, Hervé; Stieglauer, Hermann; Sommer, Daniel; Grünenpütt, Jan; Kordina, Olof; Chen, Jr-Tai; Jacquet, J-C; Lacam, C.; Piotrowicz, S.; Meneghesso, Gaudenzio; Zanoni, Enrico Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (1st March 2022) Authors: Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 37:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (25th January 2022) Authors: Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 37:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in "Buffer‐Free" AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors. Issue 8 (11th December 2022) Authors: Hult, Björn; Thorsell, Mattias; Chen, Jr-Tai; Rorsman, Niklas Other Names: Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor. Journal: Physica status solidi Issue: Volume 220:Issue 8(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗