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Author/Creator Chen, Jr-Tai

1. A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs. (21st August 2018)

Authors:
Lin, Yen-Ku; Bergsten, Johan; Leong, Hector; Malmros, Anna; Chen, Jr-Tai; Chen, Ding-Yuan; Kordina, Olof; Zirath, Herbert; Chang, Edward Yi; Rorsman, Niklas
Journal:
Semiconductor science and technology
Issue:
Volume 33:Number 9(2018:Sep.)
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Record Type:
Journal Article
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3. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress. (November 2021)

Authors:
Gao, Zhan; Rampazzo, Fabiana; Meneghini, Matteo; Modolo, Nicola; De Santi, Carlo; Blanck, Hervé; Stieglauer, Hermann; Sommer, Daniel; Grünenpütt, Jan; Kordina, Olof; Chen, Jr-Tai; Jacquet, J-C; Lacam, C.; Piotrowicz, S.; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 126(2021)
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Record Type:
Journal Article
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4. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (1st March 2022)

Authors:
Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 3(2022)
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Record Type:
Journal Article
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5. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (25th January 2022)

Authors:
Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 3(2022)
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Record Type:
Journal Article
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6. Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in "Buffer‐Free" AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors. Issue 8 (11th December 2022)

Authors:
Hult, Björn; Thorsell, Mattias; Chen, Jr-Tai; Rorsman, Niklas
Other Names:
Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor.
Journal:
Physica status solidi
Issue:
Volume 220:Issue 8(2023)
Page Start:
n/a
Record Type:
Journal Article
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