1. 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure. (January 2021) Authors: Xu, Ru; Chen, Peng; Liu, Menghan; Zhou, Jing; Li, Yimeng; Liu, Bin; Chen, Dunjun; Xie, Zili; Zhang, Rong; Zheng, Youdou Journal: Solid-state electronics Issue: Volume 175(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 46.4: Fabrication of InGaN/GaN‐based nano‐LEDs for display applications. (26th August 2021) Authors: Liu, Bin; Tao, Tao; Xu, Feifan; Xie, Zili; Chen, Dunjun; Lu, Hai; Zheng, Youdou; Zhang, Rong Journal: Digest of technical papers Issue: Volume 52(2021)Supplement 2 Page Start: 568 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A method of applying compressive pre‐stress to AlGaN barrier in AlGaN/GaN heterostructures by depositing an additional thermally mismatched dielectric. Issue 9 (28th April 2016) Authors: Liu, Yanli; Chen, Dunjun; Yang, Lianhong; Lu, Hai; Zhang, Rong; Zheng, Youdou Journal: Physica status solidi Issue: Volume 213:Issue 9(2016:Sep.) Page Start: 2474 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Achieving Record High External Quantum Efficiency >86.7% in Solar‐Blind Photoelectrochemical Photodetection (Adv. Funct. Mater. 28/2022). (11th July 2022) Authors: Liu, Xin; Wang, Danhao; Shao, Pengfei; Sun, Haiding; Fang, Shi; Kang, Yang; Liang, Kun; Jia, Hongfeng; Luo, Yuanmin; Xue, Junjun; Wang, Jin; Zhi, Ting; Chen, Dunjun; Liu, Bin; Long, Shibing; Zhang, Rong Journal: Advanced functional materials Issue: Volume 32:Number 28(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Achieving Record High External Quantum Efficiency >86.7% in Solar‐Blind Photoelectrochemical Photodetection. (29th March 2022) Authors: Liu, Xin; Wang, Danhao; Shao, Pengfei; Sun, Haiding; Fang, Shi; Kang, Yang; Liang, Kun; Jia, Hongfeng; Luo, Yuanmin; Xue, Junjun; Wang, Jin; Zhi, Ting; Chen, Dunjun; Liu, Bin; Long, Shibing; Zhang, Rong Journal: Advanced functional materials Issue: Volume 32:Number 28(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring. (14th October 2020) Authors: Guo, Hui; Jia, Xiuling; Dong, Yan; Ye, Jiandong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou Journal: Semiconductor science and technology Issue: Volume 35:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Avalanche Ruggedness of GaN p‐i‐n Diodes Grown on Sapphire Substrate. Issue 18 (25th June 2018) Authors: Liu, Wenkai; Xu, Weizong; Zhou, Dong; Ren, Fangfang; Chen, Dunjun; Yu, Peng; Zhang, Rong; Zheng, Youdou; Lu, Hai Journal: Physica status solidi Issue: Volume 215:Issue 18(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Bias stress instability involving subgap state transitions in a-IGZO Schottky barrier diodes. (7th September 2016) Authors: Qian, Huimin; Wu, Chenfei; Lu, Hai; Xu, Weizong; Zhou, Dong; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou Journal: Journal of physics Issue: Volume 49:Number 39(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Current transport dynamics and stability characteristics of the NiOx based gate structure for normally-off GaN HEMTs. (24th November 2022) Authors: Du, Yonghao; Xu, Weizong; Gong, Hehe; Ye, Jiandong; Zhou, Feng; Ren, Fangfang; Zhou, Dong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai Journal: Journal of physics Issue: Volume 55:Number 47(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering. (22nd March 2015) Authors: Liu, Yanli; Yang, Xifeng; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou Other Names: Lei Wen Academic Editor. Journal: Advances in condensed matter physics Issue: Volume 2015(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗