Author/Creator: Chandrasekaran, Sridhar - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Chandrasekaran, Sridhar

1. Conduction mechanism of Co-doped ZnO transparent memristive devices. Issue 1 (February 2021)

Authors:: Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Prasad, Om Kumar; Gapsari, Femiana; Prodromakis, Themis; Tseng, Tseung-Yuen
Journal:: IOP conference series
Issue:: Volume 1034:Issue 1(2021)
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Record Type:: Journal Article
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2. Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer. (12th March 2018)

Authors:: Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen
Journal:: Japanese journal of applied physics
Issue:: Volume 57:Number 4(2018)Supplement
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Record Type:: Journal Article
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3. Improving linearity by introducing Al in HfO2 as a memristor synapse device. (20th August 2019)

Authors:: Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R; Panda, Debashis; Tseng, Tseung-Yuen
Journal:: Nanotechnology
Issue:: Volume 30:Number 44(2019)
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Record Type:: Journal Article
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4. Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell. (29th August 2017)

Authors:: Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen
Journal:: Nanotechnology
Issue:: Volume 28:Number 38(2017)
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Record Type:: Journal Article
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5. Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell. (9th November 2017)

Authors:: Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 12(2017:Dec.)
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Record Type:: Journal Article
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