Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer. (12th March 2018)

• Record Type: Journal Article
• Authors: Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 4(2018)Supplement
• Publication Date: 2018-03-12
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.04FE10
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2 -based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2 /TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.