Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell. (29th August 2017)

• Record Type: Journal Article
• Authors: Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen
• Is Part Of: Nanotechnology. Volume 28:Number 38(2017)
• Publication Date: 2017-08-29
• Subjects: resistive switching -- electrochemical metallization devices -- zinc peroxide -- RRAM; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa80b4
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We explore the use of cubic-zinc peroxide (ZnO2 ) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2 /ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10 4 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.